| 摘要 |
A method for fabricating a semiconductor device is provided to prevent a gap from being generated at a corner of an active region and a boundary surface of a trench by forming a field oxide layer on the trench such that the field oxide layer is grown vertically and laterally and by connecting the field oxide layer to an oxide layer of the active region. An oxide layer, a nitride layer and a resist pattern are formed on a silicon substrate(10). By using the resist pattern as a mask, the oxide layer, the nitride layer and the silicon substrate are removed to form a trench(17b) by an etch process. An insulation material(15) is formed in the trench during a gap-filling process. By using the nitride layer as a mask, a predetermined depth of the insulation material in the trench is removed by an etch process. The nitride layer is removed from the upper part of the oxide layer. A dry oxide process is performed to form a filed oxide layer on the insulation material in the trench. The upper corner of the trench can be rounded by the dry oxide process.
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