| 摘要 |
A method for fabricating a fin FET(field effect transistor) of a semiconductor device is provided to simplify a fabricating process of a fin FET transistor by forming a fin conductor with first and second insulation layers. First and second insulation layers are sequentially deposited on a semiconductor substrate(10). By using a first photoresist pattern formed on the second insulation layer as a mask, the second and first insulation layers are etched to form a trench for forming a fin conductor(90). The first photoresist pattern is removed. A first conductor is deposited on the first and second insulation layers, and a CMP(chemical mechanical polishing) process is performed to form the fin conductor filled in the trench. A well implantation process and a Vt-adjustment implantation process are performed. The second insulation layer is removed, and a gate insulation layer and a gate conductive layer are sequentially deposited on the first insulation layer(30) and the fin conductor. A second photoresist pattern is formed on the gate conductive layer and is used as a mask to form a gate conductor. The second photoresist pattern is removed. A low-density ion implantation process is performed to form an LDD(lightly-doped-drain) implant region is formed. After a spacer(190) layer is deposited, a spacer is formed on the sidewall of the gate conductor. A source/drain is formed by a source/drain ion implantation process. A salicide process is performed on the exposed part of the gate conductor and the fin conductor to form a salicide layer(230).
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