发明名称 POWER SWITCH STRUCTURE AND METHOD
摘要 In one embodiment, a power switch device (33) includes a first MOSFET device (41) and a second MOSFET device (42). A split gate structure (84) including a first gate electrode (48, 87) controls the first MOSFET device (41). A second gate electrode (49, 92) controls the second MOSFET device (42). A current limit device (38) is coupled to the first gate electrode (48, 97) to turn on the first MOSFET device during a current limit mode. A comparator device (36) is coupled to the second gate electrode (49, 92) to turn on the second MOSFET device (42) when the power switch device (33) is no longer in current limit mode.
申请公布号 KR20060120654(A) 申请公布日期 2006.11.27
申请号 KR20067006616 申请日期 2004.09.15
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. 发明人 ROBB STEPHEN P.;BRIGGS DAVID K.
分类号 H02H9/02;H02H9/00;H03K17/082;H03K17/16 主分类号 H02H9/02
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