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发明名称
Method of forming field oxide layer in semiconductor device
摘要
申请公布号
KR100650835(B1)
申请公布日期
2006.11.27
申请号
KR20040087145
申请日期
2004.10.29
申请人
发明人
分类号
H01L21/76;H01L21/31;H01L21/311;H01L21/316;H01L21/762
主分类号
H01L21/76
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