发明名称 |
METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING BAND-ENGINEERED SUPERLATTICE USING INTERMEDIATE ANNEALING |
摘要 |
A method for making a semiconductor device may include forming a superlattice including a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may also include performing at least one anneal prior to completing forming of the superlattice.
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申请公布号 |
CA2611283(A1) |
申请公布日期 |
2006.11.25 |
申请号 |
CA20062611283 |
申请日期 |
2006.05.18 |
申请人 |
MEARS TECHNOLOGIES, INC. |
发明人 |
STEPHENSON, ROBERT JOHN;KREPS, SCOTT A.;HYTHA, MAREK |
分类号 |
H01L21/02;H01L21/20;H01L21/205;H01L21/8238;H01L29/04;H01L29/10;H01L29/15;H01L29/78 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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