发明名称 ELECTRON EMITTING SOURCE, ITS MANUFACTURING METHOD, ELECTRON EMITTING ELEMENT, AND COMPOSITION FOR FORMING ELECTRON EMITTING SOURCE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an electron emitting source capable of obtaining uniform electron emission characteristics since a distance between a gate electrode and the electron emitting source can be maintained at a value close to a design value, and preventing short-circuiting phenomenon between the electron emitting source and the gate electrode due to excessive exposure, and to provide its manufacturing method, and an electron emitting element adopting it. <P>SOLUTION: This electron emitting source contains a carbon based material and a UV blocking substance, and the electron emitting element adopts this electron emitting source. Since a composition for forming the electron emitting source contains the UV blocking substance, the sharpness of an electron emitting source chip is easily controlled. If this composition for forming the electron emitting source is used, the degree of margin in an electron emitting source forming process becomes high, and the electron emitting source formed from the composition can express uniform electron emission characteristics since the distance between the gate electrode and the electron emitting source is maintained at a constant level almost close to the design value, and can prevent a problem such as the short-circuiting phenomenon between it and the gate electrode due to excessive exposure. In addition, if the electron emitting source is used, the electron emitting element having enhanced reliability can be obtained. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006318918(A) 申请公布日期 2006.11.24
申请号 JP20060135448 申请日期 2006.05.15
申请人 SAMSUNG SDI CO LTD 发明人 BUN SHOUN;CHO SEIKI;HA JAE-SANG
分类号 H01J1/304;H01J9/02;H01J31/12 主分类号 H01J1/304
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