| 摘要 |
PROBLEM TO BE SOLVED: To provide a high quality single crystal diamond that has less distortion and a large area suitable for semiconductor device substrates, and to provide a method for producing the same. SOLUTION: The single crystal diamond is characterized in that when a linear polarized light which is composed of two linear polarized light perpendicular to each other is introduced into one main face of the single crystal diamond, the phase difference between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 nm at maximum per a sample thickness of 100μm over whole sample. The method for producing the single crystal diamond comprises: the step of etching one main face of a single crystal diamond substrate as a seed, which is produced by high pressure synthesis or chemical vapor deposition, by reactive ion etching and then newly growing a single crystal diamond layer on the substrate by chemical vapor deposition; and the step of separating the single crystal diamond layer newly grown by the chemical vapor deposition from the single crystal diamond substrate as a seed. COPYRIGHT: (C)2007,JPO&INPIT
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