发明名称 PLASMA CLEANING METHOD AND METHOD FOR FORMING FILM
摘要 PROBLEM TO BE SOLVED: To provide a plasma cleaning method that suppresses corrosion and damage in a component inside a chamber, has high cleaning efficiency, and achieves quick and reliable cleaning. SOLUTION: The plasma cleaning method includes a first step for setting the clearance between upper and lower electrodes to a first gap, for introducing cleaning gas from a gas introduction means, applying high frequency power to the upper electrode and/or the lower one to generate the plasma of the cleaning gas, and for cleaning the inside of a treatment vessel; a second step for generating the plasma of the cleaning gas by a second gap that is wider than the first one to perform plasma cleaning; and a third step at least for introducing the plasma of the cleaning gas generated outside for cleaning in the second gap. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006319041(A) 申请公布日期 2006.11.24
申请号 JP20050138501 申请日期 2005.05.11
申请人 TOKYO ELECTRON LTD 发明人 ASHIGAKI SHIGEO;KATO YOSHIHIRO;KAWAKAMI SATOSHI;MOROI MASAYUKI
分类号 H01L21/3065;H01L21/31 主分类号 H01L21/3065
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