发明名称 SEMICONDUCTOR DEVICE AND PROCESS FOR FABRICATING THE SAME
摘要 <p>A ferroelectric capacitor having a lower electrode (9a), a ferroelectric film (10a) and an upper electrode (11a) is formed on the upper side of a semiconductor substrate (1). The ferroelectric film (10a) is composed of CSPZT added with 0.1-5 mol% of La as an acceptor element and 0.1-5 mol% of Nb as a donor element.</p>
申请公布号 KR20060120246(A) 申请公布日期 2006.11.24
申请号 KR20067016259 申请日期 2006.08.11
申请人 FUJITSU LIMITED 发明人 WANG WENSHENG
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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