摘要 |
<p>A ferroelectric capacitor having a lower electrode (9a), a ferroelectric film (10a) and an upper electrode (11a) is formed on the upper side of a semiconductor substrate (1). The ferroelectric film (10a) is composed of CSPZT added with 0.1-5 mol% of La as an acceptor element and 0.1-5 mol% of Nb as a donor element.</p> |