METHOD FOR IMPLANTING IONS TO WAFER FOR MANUFACTURING OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING GRADED JUNCTION USING THE SAME

摘要

An ion implantation method for manufacturing a semiconductor device and a graded junction forming method using the same is provided to secure a desired surface resistance and to suppress a channel effect by using a vertical ion implantation and a tilt ion implantation. A total dose of an impurity ion to be injected is divided into at least two doses(510). A vertical ion implantation is performed to inject an impurity ion of one dose of the divided two doses in a wafer(520). A tilt ion implantation is carried out to inject an impurity ion of another dose in the wafer(530). It is judged whether or not the divided doses are all injected(540). When there is a dose, which is not injected in the wafer, a routine returns to step 530. When the divided doses are all injected, a total ion implantation is terminated.