| 摘要 |
A semiconductor memory device is provided to increase data transmission efficiency by solving a loading problem of a global input/output line by controlling a relay. A semiconductor memory device comprises a number of banks and an input/output pad for inputting/outputting data. A global input/output line is arranged on the whole region where the banks are arranged, for data transmission between the input/output pad and the banks. A relay unit(303,307) is inserted into the global input/output line, and performs data relay between a first line part(GIO01) and a second line part(GIO23) of the global input/output line. A control unit outputs a selection flag signal to selectively enable a relay operation from the first line part to the second line part of the relay unit according to the access to a bank adjacent to the first line part.
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