| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory element for reducing a threshold voltage shift due to an interference effect of a peripheral cell, and a method for manufacturing it. SOLUTION: This element comprises a tunnel dielectric film formed on a semiconductor substrate, a floating gate which is formed on the tunnel dielectric film and separated in land shapes in a cell unit, an interlayer dielectric film formed all over the surface including the floating gate, and a control gate which is formed on the interlayer dielectric film and arrayed in one direction while fully covering the upper surface and the side surface of the floating gate. COPYRIGHT: (C)2007,JPO&INPIT
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