| 摘要 |
PROBLEM TO BE SOLVED: To provide an operation method of a SONOS memory element. SOLUTION: In an operation method of a SONOS memory element having first and second impurity regions (14, 12) which are formed in a manner of being isolated from a substrate, and doped with a predetermined conductive impurity, a gate oxide film (16) formed on the substrate between the first and second impurity regions, a first trap layer (18) formed on the gate oxide film, an insulating film (20) formed on a first trap layer, and a gate electrode (22) formed on the insulating film; a first voltage (V1) and a gate voltage (V<SB>g</SB>) are applied to the first impurity region (14) and the gate electrode (22) respectively, and the second impurity region (12) is applied with a second voltage (V2) smaller than 0 V to record data into the SONOS memory element. COPYRIGHT: (C)2007,JPO&INPIT
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