| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of high dimension accuracy in pattern. SOLUTION: The semiconductor device comprises a semiconductor substrate 50, a trench formed in a p-well 70 on the main surface of the semiconductor substrate 50, a separation region 40 which is formed in the trench and comprises a defective embedding point 41, and an assist gate electrode 12 whose one part is formed on the separation region 40 and comprises an end on the defective embedding point 41. The assist gate electrode 12 comprises a thick wall T which is formed ticker than other part as embedded in the defective embedding point 41. COPYRIGHT: (C)2007,JPO&INPIT
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