| 摘要 |
An apparatus for manufacturing a plasma display panel is provided to form a dielectric on a substrate by using SiO2 at a low temperature through vacuum chemical deposition. An apparatus includes a chamber(80) receiving a substrate of a plasma display panel, a silane-based gas supply unit(50) supplying silane-based gas into the chamber, and an O2 gas introducing unit(60) introducing O2 gas into the chamber. A dielectric is formed on the substrate of the plasma display panel. The chamber is applied with a voltage from a voltage unit(70) to react the silane-based gas with the O2 gas in the chamber thereby to form SiO2.
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