| 摘要 |
PROBLEM TO BE SOLVED: To prevent a shape defect of an insulating film and fluctuation of height of the insulating film due to etching-back of the insulating film buried in a groove formed in a semiconductor substrate. SOLUTION: A method of manufacturing semiconductor device is provided with a step for forming the groove 50 on the semiconductor substrate 10, a step for burying an insulated film 60 in the groove 50, a step for making the solution of water comprising a surfactant permeate into the insulated film 60, a step for digging down an insulated film 70 into which the surfactant permeates by wet-etching, and a step for removing the surfactant from the insulated film 70 into which the surfactant permeates. COPYRIGHT: (C)2007,JPO&INPIT
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