| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method of a semiconductor device that decreases the penetration of boron into a channel, and that forms a source/drain region with up to an embedded oxide layer completely doped, and simultaneously applies compressive stress to the channel in doping the source/drain region and a gate electrode. SOLUTION: The gate electrode 302 is formed in a silicon layer 301 on the embedded oxide layer to form a recess 305 on a silicon surface that sandwiches the gate electrode 302. Then, predoping is performed on the recess 305, and a SiGe layer 401 is further formed in the recess by epitaxial deposition. Low energy doping is performed on the source/drain region and the gate electrode 302 after an extension is formed. COPYRIGHT: (C)2007,JPO&INPIT
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