FABRICATION METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THEREBY

摘要

A method for manufacturing a semiconductor device a semiconductor device manufactured thereby are provided to stably form an interlayer dielectric without defects such as void. A gate oxide film(240) is formed on a semiconductor substrate(200) on which a trench having a predetermined depth to increase a length of a valid channel. A source region(220) and a drain region(230) are formed on the semiconductor substrate. Polysilicon layers(250,260) and a metal silicide layer(270) are sequentially on the gate oxide film. The polysilicon layers have a thickness ranging from 690 to 760 Š. The metal silicide layer has a thickness from 1.5 to 1.6 times of that of the polysilicon layers. The polysilicon layers include a doped polysilicon layer having 600 to 650 Š and a non-doped silicon layer having 90 to 110 Š.