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发明名称
Method of forming a tungsten layer and method of forming a semicondcutor device using the same
摘要
申请公布号
KR100648252(B1)
申请公布日期
2006.11.24
申请号
KR20040095863
申请日期
2004.11.22
申请人
发明人
分类号
H01L21/28;H01L21/205;H01L21/3205
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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