发明名称 GATE DRIVE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To eliminate a possibility of electrical connection generated simultaneously between a p-type MOSFET and an n-type MOSFET for driving the main switching element. SOLUTION: In a gate drive circuit, when one of a p-type MOSFETQ1 and an n-type MOSFETQ2 for driving the main switching element is turned on and another is turned off, the main switching element is turned on; and, when one is turned off and another is turned on, the main switching element is turned off. In a case that one is switched ON from OFF and another is switched OFF from ON, ahead of the moment that one is switched ON from OFF, another is switched ON from OFF, one is switched OFF from ON. In a case that another is switched ON from OFF, ahead of the moment that another is switched ON from OFF, one is switched OFF from ON. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006319711(A) 申请公布日期 2006.11.24
申请号 JP20050140849 申请日期 2005.05.13
申请人 KYOSAN ELECTRIC MFG CO LTD;NISSAN MOTOR CO LTD 发明人 IWAKURA TETSUSHI;TOKUDA NOBUTAKA;DEGUCHI SHINICHI;KOIDE TOSHIYUKI
分类号 H03F3/30;H03K17/567 主分类号 H03F3/30
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