| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a non-volatile semiconductor memory cell (SZ) having a separate tunnel window cell (TF). SOLUTION: The method includes the step for forming the window cell (TF) having a tunnel zone (TG), a tunnel layer (4), a tunnel window memory layer (T5), a dielectric tunnel window layer (T6), and a tunnel window control electrode layer (T7), and the step for forming a transistor memory cell (TZ) having a channel zone (KG), a gate layer (3), a memory layer (5), a dielectric layer (6), and a control electrode layer (7). By the manufacturing method, the tunnel zone (TG) is formed in a late implantation step by tunnel implantation (I<SB>T</SB>) using the window cell (TF) as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles. COPYRIGHT: (C)2007,JPO&INPIT
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