| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can make the characteristics of a capacitor covered with interlayer insulating film satisfactory, and to provide a manufacturing method of the device. SOLUTION: The semiconductor device has a silicon substrate 51, a base insulating film 59 formed above the silicon substrate 51, the capacitor formed on the base insulating film 59, and having a lower electrode 69a, a dielectric film 70a and an upper electrode 71a, and the interlayer insulating film 118 formed above the capacitor, and including at least a BN film 76. COPYRIGHT: (C)2007,JPO&INPIT
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