| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device and a camera which are capable of reducing the read-out voltage. SOLUTION: The solid-state imaging device is provided with a plurality of photoelectric converting units 5 formed on a substrate horizontally and vertically, a transfer channel 14 formed in a substrate region between the photoelectric conversion units 5 so as to be extended vertically, a read-out gate unit 6 formed between the transfer channel 14 and the photoelectric conversion unit 5 of one side, a pixel-separating unit 8 formed between the transfer channel 14 and the photoelectric conversion unit 5 of the other side, and a first transfer electrode 21, as well as a second transfer electrode 21 formed on the transfer channel 14 and the read-out gate unit 6. The vertical length of the first transfer electrode 21 on the side of read-out gate unit 6 is longer than the vertical length at the side of the pixel-isolating unit 8. The vertical length of the second transfer electrode 22 at the side of pixel-isolating unit 8 is longer than the vertical length on the side of read-out gate unit 6. COPYRIGHT: (C)2007,JPO&INPIT
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