| 摘要 |
PROBLEM TO BE SOLVED: To provide a terminal connection structure of a semiconductor device capable of reducing inductance in a wiring member. SOLUTION: First and second wiring members 8, 9 to which reverse currents flow mutually have a flat shape each, and approach each other for opposite arrangement, thus reducing the inductance of the first and second wiring members 8, 9 by the effect of mutual inductance. A junction 8a of the first wiring member 8, and that 9a of the second one 9 are joined to a positive electrode terminal 3 in the semiconductor device 1 and a negative electrode terminal 4, respectively, by ultrasonic junction, thus eliminating the need for the junction 8a of the first wiring member 8 and that 9a of the second one 9 to have a portion for fastening screws as conventionally and have a small area, and hence reducing the inductance of the first and second wiring members 8, 9. COPYRIGHT: (C)2007,JPO&INPIT |
