发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent an interlayer insulating film from coming off by reducing stress by a mold resin. <P>SOLUTION: A semiconductor device comprises an element formed in a chip region on a substrate, a plurality of interlayer insulating films formed on the substrate, wiring formed at least in one of the plurality of interlayer insulating films, a plug that is formed at least in one of the plurality of interlayer insulating films and connects the element to the wire or connects the wiring mutually, and a surface protection film formed on the plurality of interlayer insulating films. Further, the semiconductor device has a resin protection film formed while the surface protection film, which exists at a corner section in the chip region, is covered. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006318988(A) 申请公布日期 2006.11.24
申请号 JP20050137593 申请日期 2005.05.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SANO HIKARI;HIRANO HIROSHIGE;ITO YUTAKA;TAKEMURA YASUSHI;TAKAHASHI MASAO;KOIKE KOJI
分类号 H01L21/768;H01L23/28;H01L23/522 主分类号 H01L21/768
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