| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in a conventional DC-DC converter that since the voltage difference between a gate electrode and a source electrode is large, a field relax region is provided between both electrodes and since a high voltage transistor having a thickened gate oxide film must be employed, the occupancy size in a chip is large. SOLUTION: The DC-DC converter comprises a charge pump circuit including a power supply, a first capacitor holding the power supply voltage, a second capacitor cooperating with the power supply to form a voltage equal to two times of the power supply voltage, and a switching transistor inducing the voltage equal to two times of the power supply voltage in a source electrode by connecting both capacitors, and a control circuit including a switching transistor provided with an MOS having a substrate voltage specified to the power supply voltage through a triple well structure and applying the power supply voltage to its gate electrode when above-mentioned connection is performed by the switching transistor. COPYRIGHT: (C)2007,JPO&INPIT
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