| 摘要 |
<p>A method for manufacturing a MOS transistor is provided to improve the yield and reliability by preventing defects due to an annealing process after an LDD ion implantation. A gate oxide film(104) and a gate electrode(106) are sequentially formed at an upper portion of an active region of a semiconductor substrate(100). An LDD(Lightly Doped Drain) region at a surface of the substrate at an edge of the gate electrode. A process temperature of process equipment is ramped up to a first temperature at the entire surface of the substrate and an annealing process is performed. The process temperature is ramped down to a second temperature to deposit an insulation film. The insulation film is blanket-etched to form first spacers at both sidewalls of the gate electrode. After second spacers are formed at both sidewalls of the first spacers, source/drain regions are formed in the substrate of an edge of the second spacers.</p> |
