FABLICATION METHODES OF OHMIC CONTACT LAYER AND LIGHT EMITTING DEVICE ADOPTING THE LAYER

摘要

A method for manufacturing an ohmic contact layer of a light emitting diode and a method for manufacturing a light emitting diode using the same are provided to obtain a high light transmissivity and excellent electrical characteristics. A method for manufacturing an ohmic contact layer of a light emitting diode includes a first conductive transparent material layer(100) and a second conductive material layer(120) having through holes corresponding to a plurality of islands of a nano size. The first conductive transparent material layer is formed on semiconductor material layers(50). A mask layer having the plurality of islands is formed on the first conductive transparent material layer. The second conductive material layer is formed on the first conductive transparent material layer and the islands. The islands and the second conductive material layer thereon are removed by a lift off using an etching solution.