| 摘要 |
PROBLEM TO BE SOLVED: To provide an MOS capacitive element which shows substantially identical capacitance to positive voltage and negative voltage, and also to high frequency signal and low frequency signal, and operates as an effective capacitor. SOLUTION: The MOS type capacitive element is composed of a substrate, an electrode which is formed on the substrate, an insulating film which is formed on the substrate so as to cover the electrode, a semiconductor layer which is formed on the insulating film, a first diffusion region which is formed in the semiconductor layer to be adjacent to one edge of the electrode, and a second diffusion region which is formed in the semiconductor layer to be adjacent to the other edge of the electrode. The first diffusion region is doped to have a first conductivity type, and the second diffusion region is doped to have a second, reverse conductivity type. COPYRIGHT: (C)2007,JPO&INPIT |
