| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which delays at least the progress of cracking by a simplified structure, and also to provide a manufacturing method thereof. SOLUTION: The semiconductor device 18 is formed by arranging a copper composite material heat sink 30 (heat slinger) inside a case 10, joining a ceramics insulating substrate 26 (insulating substrate) onto the copper composite material heat slinger 30, adhering it at positions corresponding to a part of the periphery of the substrate 26 by using an epoxy resin 22 (adhesive), mounting a semiconductor chip 16 to a wiring layer 27 on the ceramics insulating substrate 26, applying specified connections among the semiconductor chip 16, the ceramics insulating substrate 26, etc., and sealing the inside of the case 10 with a silicon gel 20 (gel). Thus, the semiconductor device is bonded in positions corresponding to a part of the periphery of the ceramics insulating substrate 26, so that at least the progress of cracking is delayed by a simplified structure. COPYRIGHT: (C)2007,JPO&INPIT
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