| 摘要 |
Provided is a cleaning composition comprising nonionic surfactant and inorganic iodine compound, as well as fluoric acid, which shows particles-cleaning effect, in addition to effect of metal ion-cleaning of existing cleaning composition comprising fluoric acid. The cleaning composition for cleaning a semiconductor device, comprises 0.05-0.5 vol% of 49% fluoric acid, 1-50 vol% of 30% hydrogen peroxide, 5-500 micro-grams/ml of inorganic iodine compound, 10-1000 micro-grams/ml of nonionic surfactant, and the rest of ultra-purified water. The nonionic surfactant is ethoxylates of 2,4,7,9-tetramethyl-5-decyne-4,7-diol(EO=1-30), and/or ethoxylates of 2,5,8,11-tetramethyl-6-dodecyne-5,8-diol(EO=1-4). The cleaning composition further comprises 0.1-10000 micro-grams/ml of nonionic surfactant based on aliphatic polyhydric alcohol. |
