| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal doped with nitrogen at a concentration of 1×10<SP>15</SP>atoms/cm<SP>3</SP>or more but <4.5×10<SP>15</SP>atoms/cm<SP>3</SP>. SOLUTION: In this manufacturing method, the silicon single crystal 29 is pulled from a nitrogen-containing silicon melt 12 pooled in a quartz crucible 13 while a nitrogen-free silicon raw material 23 is fed to the silicon melt 12 in an amount according to the amount of the single crystal grown so that the liquid level of the silicon melt pooled in the quartz crucible is kept constant. COPYRIGHT: (C)2007,JPO&INPIT
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