| 摘要 |
A method for forming a shallow trench isolation layer of a semiconductor device is provided to improve a gap fill margin and to simplify the process by using a high aspect ratio process. A mask film pattern is formed on a semiconductor substrate(500). A trench(600) is formed in the semiconductor substrate by using the mask film pattern as a mask. A buried insulation film(900) is formed at the trench and the semiconductor substrate. A rapid thermal process is performed to densify the buried insulation film. A patterning process is performed to expose the mask film pattern. The mask film pattern is removed. A sidewall oxide film(610) is formed at an inner wall of the trench exposed by the mask film pattern. A liner nitride film(620) is formed at the sidewall oxide film and the entire surface of the semiconductor substrate. A liner oxide film(630) is formed on the liner nitride film.
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