CAPACITOR OF SEMICONDUCTOR DEVICE FOR PREVENTING INFILTRATION OF DOPANTS AND METHOD FOR FABRICATING THE SAME

摘要

A capacitor of a semiconductor device for preventing penetration of dopants is provided to prevent dopants from a doped polysilicon germanium layer of an upper electrode from penetrating an underlying layer, by reducing diffusion of the dopants. A lower electrode(140a) of a capacitor is formed on a semiconductor substrate(100). A dielectric layer(150) is formed on the lower electrode. An upper electrode(180) is formed on the dielectric layer, composed of a conductive metal nitride layer(160) of which at least a part is oxidized and a doped polysilicon germanium layer(170) stacked on the conductive metal nitride layer. The lower electrode is made of a doped polysilicon layer, a metal layer, a conductive metal nitride layer, or a conductive metal oxide layer.