| 摘要 |
A redundancy circuit of a semiconductor memory device is provided to suppress the increase of a standby current, by controlling the supply of a driving current according to the enable state of the redundancy circuit applied in the semiconductor memory device. In a redundancy circuit controlling a redundancy cell to replace a defective cell of a semiconductor memory device, a master fuse circuit(10) comprises a master fuse and outputs an enable signal to control the enable of the redundancy circuit according to master fuse blow. At least one address fuse circuit(20) is driven by a driving voltage and comprises an address fuse, and receives the enable signal and an inverted enable signal, and outputs a fail address signal controlled according to address fuse blow. When the enable signal is enabled, the driving voltage is applied to the address fuse circuit. When the enable signal is disabled, the driving voltage is cut off.
|
