发明名称 PRESSURE-WELDED TYPE SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that can be miniaturized, and can improve the pressure-welding performance. SOLUTION: A buffer member 6 has a coefficient of linear expansion, that is nearly the same as that of a diode D2, and is placed on the diode D2 packaged onto a bus bar 15d; and a conductive member 5 is placed on the buffer member 6. The bus bar 17 is placed on the conductive member 5, and pressure in the direction of the diode D2 is applied to the bus bar 17, the conductive member 5, and the buffer member 6 by a spring member 23 fitted to a shaft 32b of an alignment member 32. Shafts 32a, 32b of the alignment member 32 are formed coaxially, and the center of the spring member 23 and the conductive member 5 are aligned coaxially 100, by engaging a recess 5a formed at the center on the upper surface of the conductive member 5 with the shaft 32a. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006318950(A) 申请公布日期 2006.11.24
申请号 JP20050136997 申请日期 2005.05.10
申请人 NISSAN MOTOR CO LTD 发明人 NARUSE MIKIO;UENO DAIGO;FURUKAWA SUKEYUKI
分类号 H01L21/52 主分类号 H01L21/52
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