发明名称 |
FABRICATION DE ZONES ACTIVES DE NATURES DIFFERENTES DIRECTEMENT SUR ISOLANT ET APPLICATION AU TRANSISTOR MOS A SIMPLE OU DOUBLE GRILLE |
摘要 |
The invention concerns a micro-electronic device comprising a substrate, a first insulating zone and a second insulating zone laying on said substrate, a first active zone comprising at least one layer made of a first semi-conductor crystalline material, resting on said first insulating zone which insulates it from the substrate, at least one second active zone comprising at least one layer in a second semi-conductor crystalline material, laying on said second insulating zone which insulates it from the substrate, said first semi-conductor crystalline material having a different composition from that of the second semi-conductor crystalline material and/or different crystalline orientation from that of the second semi-conductor crystalline material and/or mechanical strains from that of the second semi-conductor crystalline material. |
申请公布号 |
FR2870043(B1) |
申请公布日期 |
2006.11.24 |
申请号 |
FR20040050889 |
申请日期 |
2004.05.07 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ETABLISSEMENT DE CARACTERE SCIENTIFIQUE TECHNIQUE ET INDUSTRIEL |
发明人 |
ANDRIEU FRANCOIS;ERNST THOMAS;DELEONIBUS SIMON |
分类号 |
H01L27/08;H01L21/203;H01L21/762;H01L21/8238;H01L21/84;H01L27/092;H01L27/12;H01L29/04;H01L29/786 |
主分类号 |
H01L27/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|