| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a memory element having proper characteristics by suppressing variation in characteristics such as the threshold voltage in storing/reading/writing information. <P>SOLUTION: A thin film 2 for memory is sandwiched between a first electrode 1 and a second electrode 4 and the thin film 2 contains a rare earth oxide layer. When a memory element 10 containing any one element selected from Ag, Cu and Zn is manufactured in the thin film 2 for memory or in a layer 3 touching the thin film 2, the thin film 2 for memory is formed by reactive sputtering method. <P>COPYRIGHT: (C)2007,JPO&INPIT |
