| 摘要 |
A sense amplifier overdriver control circuit of a semiconductor memory device and a control method thereof are provided to prevent excessive increase in the voltage level of a core voltage stage due to over-driving when a bit line sense amplifier is driven at a relatively high external power supply voltage(VDD), by preventing a relatively high over-driving voltage from being outputted. A bit line sense amplifier unit senses and amplifies data loaded on a bit line. A first driving unit drives a pull-up voltage line of the bit line sense amplifier unit with a voltage on a normal driving voltage stage. A second driving unit drives the normal driving voltage stage with an over-driving voltage. An over-driving signal generation unit generates an over-driving signal defining an over-driving period in response to an active command. A level following unit(401) outputs a corresponding voltage, which linearly varies with the over-driving voltage. A voltage level detection unit(402) senses whether the over-driving voltage is higher than a predicted level in response to the corresponding voltage. A selective output unit(403) selectively outputs the over-driving signal in response to an output signal of the voltage level detection part. The second driving unit is controlled by an output signal of the selective output unit.
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