发明名称 PROJECTION ELECTRON MICROSCOPE, ELECTRON MICROSCOPE, SPECIMEN SURFACE OBSERVING METHOD, AND MICRO DEVICE PRODUCING METHOD
摘要 An irradiating beam (4) emitted from a cathode (1) enters a deflector (3). The optical path of the irradiating beam (4) is changed by the deflector (3) when a voltage is applied to the deflector (3), and the irradiating beam (4) passes through a common electron optical system (7) and irradiates the surface of a specimen (6). The irradiating beam (4) passes straight through the deflector (3) when no voltage is applied to the deflector (3) and is absorbed by an electron absorbing plate (17). While passing through the common electron optical system (7), the irradiating beam (4) is decelerated, and the energy is decreased to about 0 [eV] when the irradiating beam (4) reaches the surface of the specimen (6). When the irradiating beam (4) strikes the specimen (6), reflection electrons (8) are produced from the specimen (6). The reflection electrons (8) pass through the common electron optical system (7) and through an imaging electron optical system (9) when no voltage is applied to the deflector (3), and is projected onto an MCP detector (10).
申请公布号 KR20060120144(A) 申请公布日期 2006.11.24
申请号 KR20067010183 申请日期 2006.05.25
申请人 NIKON CORPORATION;EBARA CORPORATION 发明人 KANEMATSU ERIKA
分类号 H01J37/26;H01J37/04;H01J37/153;H01J37/29;H01L21/66 主分类号 H01J37/26
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