| 摘要 |
A method for forming a shallow trench isolation layer of a semiconductor device is provided to prevent lifting defects from being occurred by forming a buffer oxide film between a pad nitride film and a liner nitride film. A mask film pattern is formed on a semiconductor substrate(600). A trench is formed in the semiconductor substrate by using the mask film pattern as an etch mask. A buffer oxide layer(800) is formed at an exposed surface of the trench and the semiconductor device by using a low pressure radical oxidation method. A liner nitride film(900) and a liner oxide film are formed on the buffer oxide film. A pre heating is performed for the semiconductor substrate including the liner oxide film. A buried insulation film is formed to bury the trench. The buried insulation film is patterned to expose a surface of the mask film pattern. The mask film pattern is removed.
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