| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a cylindrical capacitive element ensuring a large capacitance with a small cell area. <P>SOLUTION: This semiconductor device 10 comprises the capacitive element having: a first capacitive element portion 44 comprising a first electrode film 39, a capacitive insulating film 42, and an upper electrode 43 successively formed within the cylindrical hole 38, in a cylindrical hole forming insulating film 36 formed in the upper portion of a semiconductor substrate 11; and a second capacitive element portion 45 formed continuously to the first capacitive element portion 44 in the upper portion of the cylindrical hole forming insulating film 36 and having a second electrode film 40, the capacitive insulating film 42, and the upper electrode 43. The second electrode film 40 is formed on the first electrode film 39 continuously to the first electrode film 39, and has a thickness larger than that of the first electrode film 39. <P>COPYRIGHT: (C)2007,JPO&INPIT |
