| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which can keep a long distance between a bottom surface of a silicide film and a p-n junction surface and can manufacture the semiconductor device with satisfactory controllability. SOLUTION: The manufacturing method for the semiconductor device comprises a process of forming a first silicide film 89 on a second conductivity type semiconductor region 87 formed on a first conductivity type semiconductor region 81, a process of forming a silicon compound film 90 comprising a (Si-H) group on the first silicide film by application, and a process of forming a second silicide film 91 by reacting a metal contained in the first silicide film with a silicon contained in the silicon compound film in thermal treatment. COPYRIGHT: (C)2007,JPO&INPIT
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