发明名称 MANUFACTURING METHOD OF ELECTRON EMISSION SOURCE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an electron emission source capable of improving a characteristic of an electron emission part. <P>SOLUTION: A process for forming an opening in an insulation layer 4 formed of a silicone ladder polymer to expose a carbon nanotube layer 3 is executed by using two kinds of dry etching having distinct conditions. In the dry etching process of the first stage, a mixture gas of CF<SB>4</SB>and O<SB>2</SB>is used, and a hole 4a having a depth of a level without exposing the carbon nanotube layer 3 is formed in a state where pressure in a reaction chamber is set below 50 Pa. Thereafter, in the dry etching process of the second stage, a mixture gas of CF<SB>4</SB>and O<SB>2</SB>is used, a bottom part 4R of the hole 4a is removed in a state where pressure in the reaction chamber is set to 50-1,000 Pa, and the upper surface of the carbon nanotube layer 3 is exposed. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006318702(A) 申请公布日期 2006.11.24
申请号 JP20050138715 申请日期 2005.05.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIMURA KUNIHIKO;YASUDA NAOKI;SUZUKI YOSUKE;HIROKADO YOSHINOBU;KAWAMOTO AKIRA
分类号 H01J9/02 主分类号 H01J9/02
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