| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to enhance current drive performance of an N channel MIS type transistor and a P channel MIS type transistor by forming a tensile stress layer on the N channel MIS type transistor and forming a compressive stress layer on the P channel MIS type transistor. A semiconductor device comprises an N channel MIS type transistor(21) and a P channel MIS type transistor(31). The semiconductor device further includes a first interlayer(41) formed on the N channel MIS type transistor and the first interlayer has tensile stress. The semiconductor device further includes a second interlayer(42) formed on the first interlayer and the P channel MIS type transistor and the second interlayer has the compressive stress. The compressive stress of the second interlayer is relaxed on an upper surface of the first interlayer.
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