| 摘要 |
Provided are a composition comprising water-soluble polymer which reacts with photoresist material and forms a coating film along the surface thereof, and a method for forming a micropattern by using the same. The composition for coating of photoresist pattern is represented by formula 1. In the formula 1, each of R1 and R4 is H or C1-C10 linear or branched alkyl, R5 is C1-C5 linear or branched alkyl having ether group, each of m and n is an integer of 1-1000, o is an integer of 1-100, and p is an integer of 1-100. The method for forming the photoresist pattern comprises the steps of (i) forming a photoresist film on the layer to be etched which is formed on base of semiconductor, (ii) exposing the photoresist film, (iii) developing a product of the step(ii) to form a desired pattern of photoresist on the base, and (iv) coating the composition as the above on the base having photoresist pattern of the step(iii).
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