| 摘要 |
A silicon-germanium photo diode for an image sensor is provided to improve sensibility by using a silicon-germanium alloy layer. A silicon-germanium photo diode for an image sensor comprises a silicon substrate(200), a silicon-germanium alloy layer(210), an insulation layer(220), and a photo diode(230). The silicon-germanium alloy layer is formed on the silicon substrate. The insulation layer is formed on the silicon-germanium alloy layer. The photo diode is formed at the silicon-germanium alloy layer by doping. A surface doping region(240) is formed on the photo diode to fill the photo diode.
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