| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a transistor in which the depletion of a gate electrode constituting the transistor is suppressed and the electrical properties of the transistor are stabilized. SOLUTION: This semiconductor device 1 comprises a semiconductor substrate 5; a first transistor 10 comprising a first gate electrode part 16 produced by laminating sequentially a first gate insulating film 24 and a first gate electrode 26 having a first gate length L1 on the semiconductor substrate 5; and a second transistor 12 comprising a second gate electrode part 20 produced by laminating sequentially a second gate insulating film 32 and a second gate electrode 30 having a second gate length L2 shorter than the first gate length L1 on the semiconductor substrate 5. The grain size of a polysilicon particle constituting the first gate electrode 26 is larger than that of a polysilicon particle constituting the second gate electrode 30. COPYRIGHT: (C)2007,JPO&INPIT
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