| 摘要 |
A process can be used to achieve the benefits of corner rounding of a semiconductor layer near an edge of a trench field isolation region without having the bird's beak or stress issues that occur with a conventional SOI device. A trench can be partially etched into a semiconductor layer, and a liner layer may be formed to help round corners of the second semiconductor layer. In one embodiment, the trench can be etched deeper and potentially expose an underlying buried oxide layer. Formation of the trench field isolation region can be completed, and electronic components can be formed within the semiconductor layer. An electronic device, such as an integrated circuit, will have a liner layer that extends only partly, but not completely, along a sidewall of the trench. In another embodiment, the process can be extended to other substrates and is not limited only to SOI substrates.
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