NONVOLATILE MEMORY SYSTEM USING MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM)

摘要

A non- volatile memory system (230) includes a magnetoresistive random access memory (MRAM) (232) including a plurality of magnetoresistive memory cells, a floating- gate nonvolatile memory (234) including a plurality of floating-gate memory cells, and a controller (236) coupled to the MRAM (232) and to the floating-gate nonvolatile memory (234). The controller (236) is adapted to be coupled to a system bus (220) and controls a selected one of the MRAM (232) and the floating-gate nonvolatile memory (234) in response to an access initiated from the system bus (220).